DocumentCode :
1768698
Title :
Design considerations of synaptic device for neuromorphic computing
Author :
Shimeng Yu ; Kuzum, Duygu ; Wong, H.-S Philip
Author_Institution :
Sch. of Comput., Inf., & Decision Syst. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
1062
Lastpage :
1065
Abstract :
Hardware implementation of neuromorphic computing is attractive as a computing paradigm beyond the conventional digital Boolean computing. Recently, two-terminal emerging memory devices that show electrically-triggered resistance modulation have been proposed as synaptic devices for neuromorphic computing. The synaptic device candidates include phase change memory (PCM), resistive RAM (RRAM) and conductive bridge RAM (CBRAM), etc. In this paper, we discuss the general design considerations of synaptic devices for plasticity and learning. As a rule of thumb for performance metrics assessment, an ideal synaptic device should have characteristics such as dimension, energy consumption, operation frequency, dynamic range, etc. that are scalable to biological systems with comparable complexity.
Keywords :
learning (artificial intelligence); neural nets; phase change memories; CBRAM; PCM; RRAM; biological systems; conductive bridge RAM; electrically-triggered resistance modulation; hardware implementation; learning; neuromorphic computing; performance metrics assessment; phase change memory; plasticity; resistive RAM; synaptic device design; two-terminal emerging memory devices; Energy consumption; Immune system; Neuromorphics; Neurons; Phase change materials; Programming; CBRAM; PCM; RRAM; learning; neuromorphic computing; plasticity; synaptice device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865322
Filename :
6865322
Link To Document :
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