Building memristive neurons and synapses

Author

Ziegler, Marcus ; Hansen, Mark ; Ignatov, Marina ; Kohlstedt, H.

Author_Institution

Tech. Fak., Christian-Albrechts-Univ. zu Kiel, Kiel, Germany

fYear

2014

fDate

1-5 June 2014

Firstpage

1066

Lastpage

1069

Abstract

Essential needs of individual memristive devices for neuromorphic circuits are defined and discussed. In more detail, memristive devices based on ionic and purely electronic mechanism are explored. The ionic devices consist of the layer sequence metal/isolator/metal and represent the currently most popular devices. The electronic device is a MemFlash-cell. The MemFlash-cell is based on a conventional floating gate transistor but by using a particular wiring scheme a two-terminal device exhibiting a memristive I-V curve is obtained. The electronic characteristics of both types of devices are experimentally explored within the framework of their capability to emulate synaptic plasticity. Advantages and disadvantages for neuromorphic applications are discussed.

Keywords

memristors; neural nets; neurophysiology; electronic device; electronic mechanism; floating gate transistor; ionic devices; layer sequence; memflash-cell; memristive curve; memristive devices; memristive neurons; memristive synapses; metal/isolator/metal; neuromorphic circuits; synaptic plasticity; wiring scheme; Aluminum oxide; Current measurement; Neuromorphics; Nonvolatile memory; Resistance; Switches; Tin; floating gate transistors; memristive devices; neuromorphic engineering; synaptic plasticity;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865323

Filename

6865323