Spin-transfer torque magnetic memory as a stochastic memristive synapse

Author

Vincent, Adrien F. ; Larroque, J. ; Zhao, Weisheng S. ; Ben Romdhane, N. ; Bichler, Olivier ; Gamrat, Christian ; Klein, Jacques-Olivier ; Galdin-Retailleau, Sylvie ; Querlioz, Damien

Author_Institution

Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2014

fDate

1-5 June 2014

Firstpage

1074

Lastpage

1077

Abstract

Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features nonvolatility, high write and read speed and high endurance. In this work, we show that when used in an original regime, it can additionally act as a stochastic memristive device, appropriate to implement a “synaptic” function. We introduce basic concepts relating to STT-MRAM cell behavior and its possible use to implement learning-capable synapses. System-level simulations on a problem of car counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. These results open the way for unexplored applications of STT-MRAM in robust, low power, cognitive-type systems.

Keywords

MRAM devices; Monte Carlo methods; magnetoelectronics; memristors; Monte Carlo simulations; STT-MRAM cell behavior; car counting; device variations; learning-capable synapses; robust low power cognitive-type systems; spin-transfer torque magnetic memory; stochastic memristive synapse; synaptic function; system-level simulations; Magnetic tunneling; Nanoscale devices; Neuromorphics; Neurons; Programming; Stochastic processes; Switches; STT-MRAM; memristor; neuromorphic; stochastic computation;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865325

Filename

6865325