Title :
Simulation of TaOx-based complementary resistive switches by a physics-based memristive model
Author :
Siemon, Anne ; Menzel, Stephan ; Marchewka, A. ; Nishi, Yoshio ; Waser, Rainer ; Linn, Eike
Author_Institution :
Inst. fur Werkstoffe der Elektrotech. II (IWE II), RWTH Aachen Univ., Aachen, Germany
Abstract :
Highly predictive memristive models of resistive switches are required to simulate the behavior of anti-serially connected resistive switches, so called complementary resistive switches (CRSs). As an emerging non-volatile device suited for ultra-dense memory architectures, CRS cells offer great potential also as content addressable memories. Here, we introduce a circuit model for TaOx-based resistive switches which we implemented in VerilogA. This model is capable of predicting CRS behavior correctly.
Keywords :
memristors; random-access storage; switches; tantalum compounds; CRS cells; TaOx; VerilogA; anti-serially connected resistive switches; circuit model; complementary resistive switches; content addressable memories; highly predictive memristive models; nonvolatile device; physics-based memristive model; ultra-dense memory architectures; Current measurement; Integrated circuit modeling; Mathematical model; Memristors; Predictive models; Switches; Voltage measurement; Memristor; complementary resistive switch; memristive device; resistive switching;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865411
