DocumentCode :
1768889
Title :
CMOS inverter analytical delay model considering all operating regions
Author :
Marranghello, Felipe S. ; Reis, Andre I. ; Ribas, Renato P.
Author_Institution :
PGMICRO, Fed. Univ. of Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
1452
Lastpage :
1455
Abstract :
This paper presents an accurate analytical delay model for CMOS inverter considering both subthreshold and superthreshold operating regions. Previous related work are either only valid for a specific operating condition or assume a step input. Therefore, that is the first approach to consider both different operating regions and input transition time. Moreover, the proposed model also considers several second order effects that influence the CMOS inverter dynamic behavior. Compared to electrical simulations based on BSIM4 transistor model the proposed delay model presents an average error of 2.3% and the worst case error of 6.6%.
Keywords :
CMOS integrated circuits; delays; invertors; network analysis; transistor circuits; BSIM4 transistor model; CMOS inverter dynamic behavior; analytical delay model; subthreshold operating regions; superthreshold operating regions; transition time; CMOS integrated circuits; Delays; Integrated circuit modeling; Inverters; MOS devices; Semiconductor device modeling; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865419
Filename :
6865419
Link To Document :
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