Title :
5-GHz SiGe linearity power amplifier using integrated feedforward architecture for WLAN applications
Author :
Kuei-Cheng Lin ; Hwann-Kaeo Chiou ; Po-Chang Wu ; Hann-Huei Tsai ; Ying-Zong Juang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
This work presents a 5-GHz power amplifier (PA) based on a tsmc™ 0.35-μm SiGe heterojunction bipolar transistor (HBT) process. The PA adopts an on-chip linearizer as a feedforward element that cancels third-order distortion at the PA output. The PA achieves an output 1-dB compression point (OP1dB) of 27 dBm, a power gain of 21.9 dB, and a power added efficiency of 31 %. Compared to a PA without a linearizer, the proposed PA improves the third-order distortion by 12 dB. For an OFDM/64-QAM signal, the error vector magnitude is minimized to 1.5 % at an output power of 18 dBm. The fabricated chip size is 2.17 mm2 and is suitable for use in a highly integrated PA.
Keywords :
Ge-Si alloys; OFDM modulation; heterojunction bipolar transistors; microwave power amplifiers; quadrature amplitude modulation; wireless LAN; OFDM-64-QAM signal; TSMC silicon-germanium HBT process; WLAN application; compression point; efficiency 31 percent; error vector magnitude; feedforward element; frequency 5 GHz; gain 21.9 dB; heterojunction bipolar transistor; highly-integrated PA; integrated feedforward architecture; on-chip linearizer; power added efficiency; power gain; silicon-germanium linearity power amplifier; size 0.35 mum; third-order distortion; Feedforward neural networks; Gain; Heterojunction bipolar transistors; Linearity; Power amplifiers; Power generation; Silicon germanium; Error vector magnitude (EVM); SiGe HBT; feedforward; power added efficiency (PAE); power amplifier (PA);
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865433
