DocumentCode :
1769041
Title :
Volatile and nonvolatile selective operation of a two-terminal gap-type atomic switch
Author :
Hasegawa, T. ; Tsuruoka, Tohru ; Aono, Masaki
Author_Institution :
Int. Center for Mater. Nanoarchitectonics, Nat. Inst. for Mater. Sci., Tsukuba, Japan
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
1800
Lastpage :
1803
Abstract :
Volatile and nonvolatile switching are selectively operated using a two-terminal gap-type atomic switch by choosing a sweeping bias range. The amount of Ag atoms those precipitate from an Ag2S electrode in the turning-on process is a function of a bias. Using a bias larger than the threshold bias, enough number of Ag atoms precipitate to make a bridge to the counter electrode, resulting in the nonvolatile operation. A bias smaller than the threshold bias does not make a bridge, and Ag atoms return to an Ag2S electrode while decreasing a bias to zero, resulting in the volatile operation. The selective operations are enabled by controlling electrochemical potentials.
Keywords :
electrodes; photoconducting switches; random-access storage; silver compounds; Ag2S; counter electrode; electrochemical potential control; nonvolatile selective operation; nonvolatile switching; sweeping bias range; threshold bias; turning-on process; two-terminal gap-type atomic switch; volatile selective operation; volatile switching; Atomic layer deposition; Electric potential; Electrodes; Nonvolatile memory; Radiation detectors; Switches; Tunneling; atomic switch; electrochemical potential; selective operation; volatile and nonvolatile;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865506
Filename :
6865506
Link To Document :
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