• DocumentCode
    1769041
  • Title

    Volatile and nonvolatile selective operation of a two-terminal gap-type atomic switch

  • Author

    Hasegawa, T. ; Tsuruoka, Tohru ; Aono, Masaki

  • Author_Institution
    Int. Center for Mater. Nanoarchitectonics, Nat. Inst. for Mater. Sci., Tsukuba, Japan
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    1800
  • Lastpage
    1803
  • Abstract
    Volatile and nonvolatile switching are selectively operated using a two-terminal gap-type atomic switch by choosing a sweeping bias range. The amount of Ag atoms those precipitate from an Ag2S electrode in the turning-on process is a function of a bias. Using a bias larger than the threshold bias, enough number of Ag atoms precipitate to make a bridge to the counter electrode, resulting in the nonvolatile operation. A bias smaller than the threshold bias does not make a bridge, and Ag atoms return to an Ag2S electrode while decreasing a bias to zero, resulting in the volatile operation. The selective operations are enabled by controlling electrochemical potentials.
  • Keywords
    electrodes; photoconducting switches; random-access storage; silver compounds; Ag2S; counter electrode; electrochemical potential control; nonvolatile selective operation; nonvolatile switching; sweeping bias range; threshold bias; turning-on process; two-terminal gap-type atomic switch; volatile selective operation; volatile switching; Atomic layer deposition; Electric potential; Electrodes; Nonvolatile memory; Radiation detectors; Switches; Tunneling; atomic switch; electrochemical potential; selective operation; volatile and nonvolatile;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865506
  • Filename
    6865506