• DocumentCode
    1769056
  • Title

    Analysis of water vapor control and passive layer process effecting on transistor performance and aluminum corrosion

  • Author

    Huang Jiaoying ; Hu Zhenyi ; Gao Cheng ; Cui Can

  • Author_Institution
    Sch. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
  • fYear
    2014
  • fDate
    24-27 Aug. 2014
  • Firstpage
    26
  • Lastpage
    30
  • Abstract
    Bipolar junction transistors can be used as switch transistors in satellite power system. In order to confirm that weather water vapor control and passive layer process effecting on transistor performance and Aluminum corrosion, 88 silicon NPN switching transistors with different process used in this paper. Experiments with temperature cycling and power on, the contrastive groups of which were with water vapor controlling and passive layer protecting, were completed. Analysis of the corrosion mechanism of Aluminum in the selected transistor elucidated effects of temperature, humidity (water vapor), voltage and ion contamination on occurrence, extent and speed of aluminum corrosion. By analyzing morphology, distribution and related factors of aluminum corrosion, a method for controlling aluminum corrosion by controlling water vapor inside transistor was put forward.
  • Keywords
    aluminium; artificial satellites; bipolar transistors; corrosion; failure analysis; moisture control; semiconductor device metallisation; semiconductor device reliability; space vehicle electronics; Al; NPN switching transistor; aluminum corrosion; bipolar junction transistors; passive layer process; passive layer protection; satellite power system; switch transistor; transistor performance; weather water vapor control; Aluminum; Atmosphere; Corrosion; Leakage currents; Temperature measurement; Transistors; Water pollution; corrosion; corrosion mechanism; passive layer; temperature cycling; water vapor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Prognostics and System Health Management Conference (PHM-2014 Hunan), 2014
  • Conference_Location
    Zhangiiaijie
  • Print_ISBN
    978-1-4799-7957-8
  • Type

    conf

  • DOI
    10.1109/PHM.2014.6988126
  • Filename
    6988126