DocumentCode :
1769056
Title :
Analysis of water vapor control and passive layer process effecting on transistor performance and aluminum corrosion
Author :
Huang Jiaoying ; Hu Zhenyi ; Gao Cheng ; Cui Can
Author_Institution :
Sch. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
fYear :
2014
fDate :
24-27 Aug. 2014
Firstpage :
26
Lastpage :
30
Abstract :
Bipolar junction transistors can be used as switch transistors in satellite power system. In order to confirm that weather water vapor control and passive layer process effecting on transistor performance and Aluminum corrosion, 88 silicon NPN switching transistors with different process used in this paper. Experiments with temperature cycling and power on, the contrastive groups of which were with water vapor controlling and passive layer protecting, were completed. Analysis of the corrosion mechanism of Aluminum in the selected transistor elucidated effects of temperature, humidity (water vapor), voltage and ion contamination on occurrence, extent and speed of aluminum corrosion. By analyzing morphology, distribution and related factors of aluminum corrosion, a method for controlling aluminum corrosion by controlling water vapor inside transistor was put forward.
Keywords :
aluminium; artificial satellites; bipolar transistors; corrosion; failure analysis; moisture control; semiconductor device metallisation; semiconductor device reliability; space vehicle electronics; Al; NPN switching transistor; aluminum corrosion; bipolar junction transistors; passive layer process; passive layer protection; satellite power system; switch transistor; transistor performance; weather water vapor control; Aluminum; Atmosphere; Corrosion; Leakage currents; Temperature measurement; Transistors; Water pollution; corrosion; corrosion mechanism; passive layer; temperature cycling; water vapor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Prognostics and System Health Management Conference (PHM-2014 Hunan), 2014
Conference_Location :
Zhangiiaijie
Print_ISBN :
978-1-4799-7957-8
Type :
conf
DOI :
10.1109/PHM.2014.6988126
Filename :
6988126
Link To Document :
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