DocumentCode
1769056
Title
Analysis of water vapor control and passive layer process effecting on transistor performance and aluminum corrosion
Author
Huang Jiaoying ; Hu Zhenyi ; Gao Cheng ; Cui Can
Author_Institution
Sch. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
fYear
2014
fDate
24-27 Aug. 2014
Firstpage
26
Lastpage
30
Abstract
Bipolar junction transistors can be used as switch transistors in satellite power system. In order to confirm that weather water vapor control and passive layer process effecting on transistor performance and Aluminum corrosion, 88 silicon NPN switching transistors with different process used in this paper. Experiments with temperature cycling and power on, the contrastive groups of which were with water vapor controlling and passive layer protecting, were completed. Analysis of the corrosion mechanism of Aluminum in the selected transistor elucidated effects of temperature, humidity (water vapor), voltage and ion contamination on occurrence, extent and speed of aluminum corrosion. By analyzing morphology, distribution and related factors of aluminum corrosion, a method for controlling aluminum corrosion by controlling water vapor inside transistor was put forward.
Keywords
aluminium; artificial satellites; bipolar transistors; corrosion; failure analysis; moisture control; semiconductor device metallisation; semiconductor device reliability; space vehicle electronics; Al; NPN switching transistor; aluminum corrosion; bipolar junction transistors; passive layer process; passive layer protection; satellite power system; switch transistor; transistor performance; weather water vapor control; Aluminum; Atmosphere; Corrosion; Leakage currents; Temperature measurement; Transistors; Water pollution; corrosion; corrosion mechanism; passive layer; temperature cycling; water vapor;
fLanguage
English
Publisher
ieee
Conference_Titel
Prognostics and System Health Management Conference (PHM-2014 Hunan), 2014
Conference_Location
Zhangiiaijie
Print_ISBN
978-1-4799-7957-8
Type
conf
DOI
10.1109/PHM.2014.6988126
Filename
6988126
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