Title :
Design of SRAM PUF with improved uniformity and reliability utilizing device aging effect
Author :
Garg, Adesh ; Kim, Tony T.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
SRAM Physical Unclonable Function (PUF) makes use of efficient silicon fabrication process where duplication of exact replica devices is difficult. One of the major issues with SRAM-PUF is the reliability and uniformity of the start-up pattern with environmental fluctuations. This paper presents a technique for improving uniformity (distribution of 1´s & 0´s) and reliability (variations in power-up patterns) of SRAM-PUF utilizing aging effects (mainly NBTI). The proposed technique maintains the uniformity of SRAM-PUF by controlling the polarity of the aging in SRAM arrays. The reliability is controlled by further injecting aging to the SRAM arrays after achieving target uniformity.
Keywords :
SRAM chips; integrated circuit reliability; negative bias temperature instability; NBTI; SRAM PUF; SRAM physical unclonable function; aging effects; aging polarity; environmental fluctuations; exact replica devices; silicon fabrication process; startup pattern; Aging; Arrays; Inverters; Reliability; SRAM cells; Security; Physical Unclonable Function (PUF); Static Random Access Memory (SRAM); device aging;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865541
