Design of SRAM PUF with improved uniformity and reliability utilizing device aging effect

Author

Garg, Adesh ; Kim, Tony T.

Author_Institution

Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore

fYear

2014

fDate

1-5 June 2014

Firstpage

1941

Lastpage

1944

Abstract

SRAM Physical Unclonable Function (PUF) makes use of efficient silicon fabrication process where duplication of exact replica devices is difficult. One of the major issues with SRAM-PUF is the reliability and uniformity of the start-up pattern with environmental fluctuations. This paper presents a technique for improving uniformity (distribution of 1´s & 0´s) and reliability (variations in power-up patterns) of SRAM-PUF utilizing aging effects (mainly NBTI). The proposed technique maintains the uniformity of SRAM-PUF by controlling the polarity of the aging in SRAM arrays. The reliability is controlled by further injecting aging to the SRAM arrays after achieving target uniformity.

Keywords

SRAM chips; integrated circuit reliability; negative bias temperature instability; NBTI; SRAM PUF; SRAM physical unclonable function; aging effects; aging polarity; environmental fluctuations; exact replica devices; silicon fabrication process; startup pattern; Aging; Arrays; Inverters; Reliability; SRAM cells; Security; Physical Unclonable Function (PUF); Static Random Access Memory (SRAM); device aging;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865541

Filename

6865541