High-performance low-power magnetic tunnel junction based non-volatile flip-flop

In this paper, a novel magnetic tunnel junction (MTJ) based non-volatile flip-flop (NVFF) is proposed. The separated latch and sensing circuit structure maximizes the performance of latch operation, minimizes power consumption, and improves MTJ lifetime. Furthermore, the merged sensing and write circuit structure reduces area overhead. HSPICE simulation results using a 45-nm technology model show that the proposed NVFF achieves three times smaller power delay product with a 2% smaller layout area than the conventional NVFF.