Title :
Overview of resistive switching memory (RRAM) switching mechanism and device modeling
Author_Institution :
Sch. of Comput., Inf., & Decision Syst. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfOx bipolar RRAM as a model system. The future challenges of RRAM modeling are finally discussed.
Keywords :
hafnium compounds; high-k dielectric thin films; integrated circuit modelling; random-access storage; HfOx; analytical compact models; bipolar RRAM; numerical continuous models; numerical discretized models; oxide resistive switching memory; representative device modeling approaches; resistive switching memory switching mechanism; Analytical models; Electrodes; Electron traps; Hafnium compounds; Switches; Tunneling; RRAM; mechanism; modeling; resistive switching;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865560
