Qualitative SPICE modeling accounting for volatile dynamics of TiO2 memristors

Accurate modeling of memristive devices is a critical condition that will allow the realization of large-scale memristor based circuits. The current methodology regarding modeling focuses on obtaining realistic pinched hysteresis curves, which are memristor signatures, but these do not hold useful information regarding device performance. We divert from this practice and propose a SPICE memristor model constructed based on qualitative verified assumptions of real memristive device operation. Our model introduces volatile effects that render a rate-dependent operation, and also accounts for both bipolar and unipolar switching. We demonstrate its plausibility via a wealth of simulation cases, which are qualitatively similar to several memristor dynamics reported in literature. Finally our model is benchmarked against measured results acquired by solid-state TiO₂ memristors.