Title :
Field driven STT-MRAM cell for reduced switching latency and energy
Author :
Patel, Rahul ; Ipek, Engin ; Friedman, Eby G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
Abstract :
A field driven approach to STT-MRAM switching is proposed as a method for reducing the switching latency of an MTJ in high performance caches. An MRAM array model is presented to characterize the switching energy and maximum achievable reduction in energy using the field driven approach. The switching latency per bit is reduced by more than a factor of ten. The resultant switching energy per bit is reduced by 82% as compared to a standard STT-MRAM.
Keywords :
MRAM devices; magnetic tunnelling; MRAM array model; MTJ; STT-MRAM switching; field-driven STT-MRAM cell; standard STT-MRAM; switching energy; switching energy reduction; switching latency reduction; Arrays; Magnetic switching; Magnetic tunneling; Resistance; Switches; Torque; Transistors;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865599
