Title :
Scalable behavior modeling for SCR based ESD protection structures for circuit simulation
Author :
Li Wang ; Rui Ma ; Chen Zhang ; Zongyu Dong ; Fei Lu ; Wang, Aiping ; Xin Wang ; Jian Liu ; Siqiang Fan ; He Tang ; Baoyong Chi ; Liji Wu ; Ren, T.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA
Abstract :
This paper reports a new scalable behavioral modeling technique for silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection structures using Verilog-A language. Accurate models were developed for various low-triggering voltage SCR ESD (LVSCR) protection structures implemented in a foundry 180nm RF process, which were validated by circuit simulation and ESD measurement.
Keywords :
BiCMOS integrated circuits; electrostatic discharge; hardware description languages; integrated circuit modelling; low-power electronics; radiofrequency integrated circuits; thyristors; ESD measurement; LVSCR protection structures; RF process; SCR based ESD protection structures; Verilog-A language; circuit simulation; electrostatic discharge; low-triggering voltage SCR ESD protection structures; scalable behavior modeling; silicon controlled rectifier; size 180 nm; Circuit simulation; Electrostatic discharges; Integrated circuit modeling; Logic gates; SPICE; Testing; Thyristors; Behavior Model; ESD; LVSCR; SCR;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865639
