• DocumentCode
    1769336
  • Title

    Highly efficient InGaN-based LED with embedded cubic airvoids

  • Author

    Da-Wei Lin ; Jhih-Kai Huang ; Che-Yu Liu ; Ruey-Wen Chang ; Sheng-Wen Wang ; Gou-Chung Chi ; Hao-Chung Kuo

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Highly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; nanolithography; passivation; InGaN; embedded sidewall passivation cubic airvoids; highly efficient InGaN-based LED; light emitting diodes; light output enhancement; nanoimprint lithography; Etching; Gallium nitride; Light emitting diodes; Passivation; Plasmas; Power generation; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6988277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1769336