Title :
Highly efficient InGaN-based LED with embedded cubic airvoids
Author :
Da-Wei Lin ; Jhih-Kai Huang ; Che-Yu Liu ; Ruey-Wen Chang ; Sheng-Wen Wang ; Gou-Chung Chi ; Hao-Chung Kuo
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Highly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; nanolithography; passivation; InGaN; embedded sidewall passivation cubic airvoids; highly efficient InGaN-based LED; light emitting diodes; light output enhancement; nanoimprint lithography; Etching; Gallium nitride; Light emitting diodes; Passivation; Plasmas; Power generation; Resists;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
