DocumentCode
1769502
Title
A 6T-4C shadow memory using plate line and word line boosting
Author
Nakagawa, T. ; Izumi, Shintaro ; Yoshimoto, Shusuke ; Yanagida, Koji ; Kitahara, Yuki ; Kawaguchi, Hitoshi ; Yoshimoto, Masahiko
Author_Institution
Grad. Sch. of Syst. Inf., Kobe Univ., Kobe, Japan
fYear
2014
fDate
1-5 June 2014
Firstpage
2736
Lastpage
2739
Abstract
This report describes a high speed 6T-4C shadow memory design using a word line boosting and a plate line driver boosting. The proposed methods utilize a characteristic of ferroelectric capacitor. The word line and the plate line boosting method respectively reduce 21% write time and 33% plate line charging time.
Keywords
ferroelectric capacitors; ferroelectric storage; random-access storage; 6T-4C shadow memory design; ferroelectric capacitor; plate line charging time; plate line driver boosting; word line boosting; write time; Boosting; Capacitors; Delays; Ferroelectric films; Inverters; Nonvolatile memory; Random access memory; FeRAM; High-speedc; Nonvolatile memory; Shadow memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location
Melbourne VIC
Print_ISBN
978-1-4799-3431-7
Type
conf
DOI
10.1109/ISCAS.2014.6865739
Filename
6865739
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