DocumentCode :
1769518
Title :
A novel dimensional analysis method for TSV modeling and analysis in three dimensional integrated circuits
Author :
Salah, Khaled ; Ismail, Yousr
Author_Institution :
Mentor Graphics, Cairo, Egypt
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
2764
Lastpage :
2767
Abstract :
Dimensional analysis is one of the most powerful modeling methods, where it is used to reduce the number of physical variables through combining two or more variables into a single dimension neutral one in order to simplify the process of describing a relationship among those variables. That makes curve fitting to obtain final equations simpler. In this paper, dimensional analysis is applied as a new design methodology for TSV modeling. By using the dimensional analysis and the curve-fitting technique, simple formulas of TSV parameters, such as resistance, capacitance, and inductance are obtained. The results are compared with previous work that model TSVs based on measurements, where excellent agreement is obtained.
Keywords :
curve fitting; integrated circuit modelling; three-dimensional integrated circuits; TSV modeling; curve fitting; dimensional analysis; three dimensional integrated circuits; Analytical models; Capacitance; Curve fitting; Integrated circuit interconnections; Integrated circuit modeling; Mathematical model; Through-silicon vias; Dimensional analysis; Modeling; TSV; Three-Dimensional ICs; Through Silicon Via;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865746
Filename :
6865746
Link To Document :
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