Title :
New materials for memristive switching
Author :
Byung Joon Choi ; Ning Ge ; Yang, Jie J. ; Min-Xian Zhang ; Williams, R.S. ; Norris, Kate J. ; Kobayashi, Nobuhiko P.
Author_Institution :
Hewlett-Packard Labs., Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO2 nanometallic memristors. The former represents nonoxide systems that might be more compatible with nitride electrodes preferred in a fab and the latter represents engineered materials that exhibit a better controllability over the formation of switching channel(s).
Keywords :
electrodes; memristors; random-access storage; switching; Pt-SiO2; memristive devices; memristive switching; nanometallic memristors; nitride electrodes; nitride memristors; nonoxide systems; switching channel; switching materials; Electrodes; Films; III-V semiconductor materials; Memristors; Metals; Switches; Pt doped SiO2; memory; memristive devices; new switching materials; nitride memristors;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865757
