• DocumentCode
    1769541
  • Title

    The short-term memory (d.c. response) of the memristor demonstrates the causes of the memristor frequency effect

  • Author

    Gale, Ella ; de Lacy Costello, Ben ; Erokhin, Victor ; Adamatzky, Andrew

  • Author_Institution
    Center for Unconventional Comput., Univ. of the West of England, Bristol, UK
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    2812
  • Lastpage
    2815
  • Abstract
    A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.
  • Keywords
    hysteresis; memristors; decaying curve; hysteresis size; memristor DC response; memristor frequency effect; pinched hysteresis curve; short term memory; Current measurement; Frequency measurement; Hysteresis; Magnetic hysteresis; Memristors; Time measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865758
  • Filename
    6865758