DocumentCode
1769541
Title
The short-term memory (d.c. response) of the memristor demonstrates the causes of the memristor frequency effect
Author
Gale, Ella ; de Lacy Costello, Ben ; Erokhin, Victor ; Adamatzky, Andrew
Author_Institution
Center for Unconventional Comput., Univ. of the West of England, Bristol, UK
fYear
2014
fDate
1-5 June 2014
Firstpage
2812
Lastpage
2815
Abstract
A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.
Keywords
hysteresis; memristors; decaying curve; hysteresis size; memristor DC response; memristor frequency effect; pinched hysteresis curve; short term memory; Current measurement; Frequency measurement; Hysteresis; Magnetic hysteresis; Memristors; Time measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location
Melbourne VIC
Print_ISBN
978-1-4799-3431-7
Type
conf
DOI
10.1109/ISCAS.2014.6865758
Filename
6865758
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