Title :
Band-to-band tunneling in 3D devices
Author :
Filipovic, Lado ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.
Keywords :
nanowires; tunnelling; 3D devices; 3D effects; applied bias; band-to-band tunneling current computation; cylindrical nanowires; doping concentration variation; geometry; material properties; tapered structures; Doping; Effective mass; Geometry; Nanowires; Three-dimensional displays; Tunneling; Wave functions;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865810
