DocumentCode
1769640
Title
Absorption in disordered heterostructures: Contributions from intra- and inter-subband scattering and impact of localised states
Author
Carosella, F. ; Ndebeka-Bandou, C. ; Ferreira, Ricardo ; Bastard, G. ; Wacker, Arno
Author_Institution
Lab. Pierre Aigrain, Ecole Normale Super., Paris, France
fYear
2014
fDate
3-6 June 2014
Firstpage
1
Lastpage
2
Abstract
We developed a model for the exact calculation of the absorption spectrum in disordered heterostructures allowing the understanding of the lineshape in terms of the contributions from intra-subband and inter-subband scatterings. A dopant engineering of the inter-subband lineshape is proposed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; localised states; semiconductor doping; semiconductor heterojunctions; semiconductor quantum wells; spectral line breadth; GaAs-AlGaAs; absorption spectrum; disordered heterostructures; dopant engineering; intersubband lineshape; intersubband scattering; intrasubband scattering; localised states; Absorption; Biological system modeling; Gallium arsenide; Impurities; Quantum cascade lasers; Scattering; Semiconductor process modeling; disorder; free carrier absorption; heterostructures; localized states;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location
Paris
Type
conf
DOI
10.1109/IWCE.2014.6865834
Filename
6865834
Link To Document