Title :
Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs
Author :
Aldegunde, Manuel ; Kalna, Karol ; Hepplestone, S.P. ; Sushko, P.V.
Author_Institution :
Electron. Syst. Design Centre, Swansea Univ., Swansea, UK
Abstract :
Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In particular, the band gap narrowing near the interface lowers the interface resistivity by more than one order of magnitude with respect to that calculated for the idealised Schottky contact: from 2.1×10-8 Ω·cm2 to 4.7×10-10 Ω·cm2.
Keywords :
MOSFET; Monte Carlo methods; Schottky barriers; discrete Fourier transforms; finite element analysis; gallium arsenide; molybdenum; DFT; Mo-GaAs; band gap; coupling ab initio calculations; electron transport; electronic properties; idealised Schottky contact; interface resistivity; metal-semiconductor contacts; multiscale simulations; nano-MOSFET; three-dimensional finite element ensemble Monte Carlo simulations; transport characteristics; Computational modeling; Gallium arsenide; Monte Carlo methods; Scattering; Solid modeling; Three-dimensional displays; Tunneling;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865836
