Title :
Graphene-based Klein tunneling transistor
Author :
Berrada, S. ; Nguyen, Viet Hung ; Dollfus, P. ; Wilmart, Q. ; Feve, G. ; Berroir, J.-M. ; Placais, B.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
We propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region generated by a triangular gate. In this region, total internal reflection may occur, which leads to the controllable suppression of transistor transmission. We study the transmission and the current in this device by means of non-equilibrium Green´s function (NEGF) simulation.
Keywords :
Green´s function methods; graphene; tunnel transistors; tunnelling; DF geometrical optics; NEGF simulation; graphene-based Klein tunneling transistor; nonequilibrium Green function simulation; prismatic active region; total internal reflection; transistor transmission suppression; triangular gate; Doping; Graphene; Junctions; Logic gates; Reflection; Transistors; Tunneling; Dirac fermion optics; Klein tunneling; ballistic; graphene; transistor;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865839
