Title :
Frequency-dependent shot noise in single-electron devices
Author :
Talbo, V. ; Mateos, Javier ; Retailleau, S. ; Dollfus, P. ; Gonzalez, Temoatzin
Author_Institution :
Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.
Keywords :
shot noise; single electron devices; tunnelling; SENS simulator; autocorrelation functions; double-tunnel junction simulation; frequency-dependent shot noise; multistate process; single-electron devices; spectral density; static behavior; Correlation; Junctions; Mathematical model; Noise; Quantum dots; Silicon; Tin; Double-tunnel junction; Monte-Carlo simulations; Shot Noise; Single-electron device;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865843
