An adaptive grid algorithm for self-consistent k·p Schrodinger and Poisson equations in UTB InSb-based pMOSFETs

Author

Pengying Chang ; Xiaoyan Liu ; Lang Zeng ; Kangliang Wei ; Gang Du

Author_Institution

Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms.

Keywords

MOSFET; Poisson equation; Schrodinger equation; hole mobility; indium compounds; oxygen compounds; photons; surface roughness; 2D k space; InSb-OI; Kubo-Greenwood formalism; Poisson equations; UTB-based pMOSFET; adaptive grid algorithm; hole mobility; microscopic approach; nonpolar acoustic phonons; polar optical phonons; self-consistent k·p Schrodinger equations; surface roughness scattering mechanisms; ultra-thin body devices; valence band structures; Acoustics; MOSFET; Optical scattering; Phonons; Poisson equations; Silicon; III-V; InSb; MOSFET; UTB; hole mobility; modeling; scattering; six band k·p;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865845

Filename

6865845