Phonon-induced quantum diffusion in semiconductors

Author

Rosati, Roberto ; Rossi, Francesco

Author_Institution

Dept. of Appl. Sci. & Technol., Politec. di Torino, Turin, Italy

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.

Keywords

III-V semiconductors; Markov processes; diffusion; electron-phonon interactions; gallium compounds; nanostructured materials; wide band gap semiconductors; GaN; Markov limit; carrier-carrier relaxation; carrier-phonon interaction; density-matrix treatment; phonon-induced quantum diffusion; phonon-induced scattering nonlocality; photoexcited semiconductors; quasielastic dissipation; semiconductor nanostructures; simplified dephasing models; Charge carrier density; Markov processes; Microscopy; Nanoscale devices; Phonons; Scattering; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865847

Filename

6865847