• DocumentCode
    1769677
  • Title

    Remote soft-optical phonon scattering in Si nanowire FETs

  • Author

    Barker, John R. ; Martinez, A.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2014
  • fDate
    3-6 June 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.
  • Keywords
    elemental semiconductors; field effect transistors; nanowires; phonons; silicon; HfO2-Si; bulk-type phonons; drain current; gate-all-around silicon nanowire FET; gate-all-around silicon nanowire field effect transistors; polar SO phonons; remote SO phonon scattering; remote soft-optical phonon scattering; transfer characteristics; Educational institutions; Logic gates; MOSFET; Phonons; Scattering; Silicon; NEGF; Si nanowires; remote SO phonons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2014 International Workshop on
  • Conference_Location
    Paris
  • Type

    conf

  • DOI
    10.1109/IWCE.2014.6865851
  • Filename
    6865851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1769677