Title :
Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study
Author :
Amoroso, Salvatore Maria ; Georgiev, Vihar P. ; Towie, Ewan ; Riddet, C. ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-AU-Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.
Keywords :
MOSFET; elemental semiconductors; nanowires; silicon; 3D coupled mode space NEGF study; Si; back-bias voltage; boundary conditions; channel interface; charge density; complete discretization approach; electron effective mass; electron transport; fin width; gate oxide; nanoscale GAA silicon transistor; nanoscale gate-all-around silicon transistor; nanowire metamorphosis; quantum features; simplified discretization approach; structure bottom oxide; trigate FinFET; wave function penetration; Boundary conditions; Effective mass; Logic gates; Nanoscale devices; Silicon; Transistors; Wave functions; FinFET; Nanowire; Non Equilibrium Green Functions; Poisson; Quantum Transport; Schrodinger;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865854
