Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study

Author

Amoroso, Salvatore Maria ; Georgiev, Vihar P. ; Towie, Ewan ; Riddet, C. ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-AU-Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.

Keywords

MOSFET; elemental semiconductors; nanowires; silicon; 3D coupled mode space NEGF study; Si; back-bias voltage; boundary conditions; channel interface; charge density; complete discretization approach; electron effective mass; electron transport; fin width; gate oxide; nanoscale GAA silicon transistor; nanoscale gate-all-around silicon transistor; nanowire metamorphosis; quantum features; simplified discretization approach; structure bottom oxide; trigate FinFET; wave function penetration; Boundary conditions; Effective mass; Logic gates; Nanoscale devices; Silicon; Transistors; Wave functions; FinFET; Nanowire; Non Equilibrium Green Functions; Poisson; Quantum Transport; Schrodinger;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865854

Filename

6865854