Title :
Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors
Author :
Mahi, Abdelhamid ; Belghachi, A. ; Marinchio, Hugues ; Palermo, Carmine ; Varani, Luca
Author_Institution :
Lab. of Phys. & Semicond. Devices, Univ. of Bechar, Bechar, Algeria
Abstract :
By means of a numerical hydrodynamic (HD) model coupled with Poisson pseudo-2D equation, we simulate the drain current response of a high electron mobility transistor (HEMT) to a THz signal applied to its gate and/or to its drain contacts in order to obtain the optimal configuration in terms of detection.
Keywords :
high electron mobility transistors; plasma oscillations; stochastic processes; terahertz waves; HD model; HEMT; Poisson pseudo2D equation; THz radiation; THz signal; drain contact; drain current response; high-electron mobility transistors; numerical hydrodynamic model; optimal configuration; plasma oscillation response; HEMTs; Harmonic analysis; Logic gates; Mathematical model; Plasma waves; Plasmas;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865859
