Title :
Phonon transport in silicon nanowires using a Full-Band Monte Carlo approach
Author :
Larroque, J. ; Saint-Martin, J. ; Dollfus, P.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
We show that with a Full-Band dispersion, the specific heat is closer to the experimental value than with an isotropic quadratic dispersion. So we use a Full-Band dispersion in the transport algorithm. A Monte Carlo algorithm has been developed to simulate phonon transport in silicon nanowire. It has been successfully used to simulate the thermal conductivity.
Keywords :
Monte Carlo methods; elemental semiconductors; nanowires; phonons; silicon; specific heat; thermal conductivity; Si; full-band Monte Carlo approach; full-band dispersion; isotropic quadratic dispersion; phonon transport property; silicon nanowires; specific heat; thermal conductivity; transport algorithm; Dispersion; Heating; Monte Carlo methods; Nanowires; Phonons; Scattering; Silicon; Monte Carlo; Nanowire; phonon heat transport;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865864
