Title :
Modulation of bandgap and current in Graphene/BN heterostructures by tuning the transverse electric field
Author :
Van-Truong Tran ; Saint-Martin, J. ; Dollfus, P.
Author_Institution :
Inst. d´Electron. Fondamentale (IEF), Univ. Paris-sud, Orsay, France
Abstract :
By means of atomistic Tight Binding simulations, we study heterostructures made of an armchair BN nanoribbon sided by two armchair graphene ribbons where a high band gap can be opened. We show that this band gap can be significantly suppressed by applying a relatively weak transverse electric field. This effect can be used to strongly enhance the on/off current ratio higher in graphene transistors.
Keywords :
III-V semiconductors; boron compounds; energy gap; graphene; nanoribbons; semiconductor-insulator boundaries; tight-binding calculations; wide band gap semiconductors; BN-C; armchair BN nanoribbon; armchair graphene ribbons; atomistic tight binding simulations; bandgap modulation; graphene transistors; graphene-BN heterostructures; on-off current ratio; transverse electric fields; Boron; Electric fields; Electric potential; Graphene; Photonic band gap; Transistors; Tuning; bandgap; boron nitride; graphene; transistor;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865869
