Title :
Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions
Author :
Gruzinskis, V. ; Starikov, E. ; Shiktorov, P. ; Marinchio, Hugues ; Torres, Juana ; Palermo, Carmine ; Varani, Luca
Author_Institution :
Center for Sci. & Technol., Semicond. Phys. Inst., Vilnius, Lithuania
Abstract :
In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current. Physically, the effect is caused by the suppression effect of the remote Coulomb interaction which takes place in the gated region of the conducting channel. In the present work we propose a way to overcome this limitation by using the impact ionization effect. It is shown by Monte Carlo simulation that the impact ionization in MOSFET structures allows us to get near THz oscillations.
Keywords :
Gunn effect; III-V semiconductors; MOSFET; Monte Carlo methods; impact ionisation; indium compounds; FET-HEMT structures; Gunn effect; InP; MOSFET structures; Monte Carlo simulation; high-frequency oscillations; impact ionization condition; impact ionization effect; near-THz oscillations; near-terahertz oscillations; positive gate bias condition; remote Coulomb interaction; suppression effect; Impact ionization; Indium phosphide; Logic gates; MOSFET; Mathematical model; Oscillators; Semiconductor process modeling;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865870
