Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions

Author

Gruzinskis, V. ; Starikov, E. ; Shiktorov, P. ; Marinchio, Hugues ; Torres, Juana ; Palermo, Carmine ; Varani, Luca

Author_Institution

Center for Sci. & Technol., Semicond. Phys. Inst., Vilnius, Lithuania

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

2

Abstract

In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current. Physically, the effect is caused by the suppression effect of the remote Coulomb interaction which takes place in the gated region of the conducting channel. In the present work we propose a way to overcome this limitation by using the impact ionization effect. It is shown by Monte Carlo simulation that the impact ionization in MOSFET structures allows us to get near THz oscillations.

Keywords

Gunn effect; III-V semiconductors; MOSFET; Monte Carlo methods; impact ionisation; indium compounds; FET-HEMT structures; Gunn effect; InP; MOSFET structures; Monte Carlo simulation; high-frequency oscillations; impact ionization condition; impact ionization effect; near-THz oscillations; near-terahertz oscillations; positive gate bias condition; remote Coulomb interaction; suppression effect; Impact ionization; Indium phosphide; Logic gates; MOSFET; Mathematical model; Oscillators; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865870

Filename

6865870