Predictivity of the non-local BTBT model for structure dependencies of tunnel FETs

Author

Fukuda, Kenji ; Mori, Takayoshi ; Mizubayashi, W. ; Morita, Yusuke ; Tanabe, A. ; Masahara, M. ; Yasuda, Toshiyuki ; Migita, S. ; Ota, Hiroyuki

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

The non-local band to band tunneling model developed and implemented into the three-dimensional device simulator by the authors is evaluated for the tunnel-FET modeling focused on device geometry effects. Measured characteristics of SOI, Fin, and parallel-plate silicon tunnel FETs fabricated by the authors are compared with simulations based on the non-local model. Although each device structures have specific features in their electrical characteristics, the non-local model explains the various geometry effects very well throughout the comparisons. From these comparisons, validity and predictivity of the non-local model is ensured for the device design of tunnel FETs.

Keywords

field effect transistors; semiconductor device testing; silicon-on-insulator; tunnel transistors; Fin; SOI; band to band tunneling model; device design; device geometry effects; electrical characteristics; nonlocal BTBT model predictivity; parallel-plate silicon tunnel FET; structure dependencies; three-dimensional device simulator; Current measurement; Field effect transistors; Logic gates; Predictive models; Semiconductor device measurement; Semiconductor device modeling; Tunneling; band to band tunneling; modeling; non-local; semiconductor device simulation; tunnel FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865871

Filename

6865871