• DocumentCode
    1769725
  • Title

    Impact of lateral doping profiles on ultra-scaled Trigate FinFETs

  • Author

    Valin, Raul ; Aldegunde, Manuel ; Martinez, A. ; Barker, John R.

  • Author_Institution
    Coll. of Eng., Swansea Univ., Swansea, UK
  • fYear
    2014
  • fDate
    3-6 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor doping; silicon; Si; electrical characteristics; lateral doping profiles; quantum transport simulations; ultra-scaled transistors; ultra-scaled trigate FinFET; Doping; Educational institutions; FinFETs; Logic gates; Phonons; Scattering; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2014 International Workshop on
  • Conference_Location
    Paris
  • Type

    conf

  • DOI
    10.1109/IWCE.2014.6865874
  • Filename
    6865874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1769725