Title :
Impact of lateral doping profiles on ultra-scaled Trigate FinFETs
Author :
Valin, Raul ; Aldegunde, Manuel ; Martinez, A. ; Barker, John R.
Author_Institution :
Coll. of Eng., Swansea Univ., Swansea, UK
Abstract :
The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.
Keywords :
MOSFET; elemental semiconductors; semiconductor doping; silicon; Si; electrical characteristics; lateral doping profiles; quantum transport simulations; ultra-scaled transistors; ultra-scaled trigate FinFET; Doping; Educational institutions; FinFETs; Logic gates; Phonons; Scattering; Semiconductor process modeling;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865874
