Title :
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
Author :
Abdikarimov, A. ; Indalecio, G. ; Comesana, E. ; Garcia-Loureiro, Antonio J. ; Seoane, N. ; Kalna, Karol ; Atamuratov, A.E.
Author_Institution :
CITIUS, Univ. de Santiago de Compostela, Santiago de Compostela, Spain
Abstract :
Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), influence the both device design and device and circuit performance. In this work, we have studied the impact of a shape of the device body on the characteristics of a 10.7 nm gate length SOI-FinFET. After a meticulous calibration against Monte-Carlo simulations, we have studied the effect of changing the shape of the body from a square cross-section to a triangular one on the sub-threshold region of the device. We have analysed four figures of merit: off-current, sub-threshold slope, threshold voltage and sub-threshold swing. The best results, in terms of lower off-current and sub-threshold swing, were obtained for the triangular shape device, which makes this particular geometry more suitable for digital applications.
Keywords :
MOSFET; Monte Carlo methods; silicon-on-insulator; Monte-Carlo simulations; SOI-FinFET; calibration; circuit performance; critical dimensions; device design; device geometry; digital applications; electrical characteristics; figures of merit; gate length; intrinsic parameter fluctuations; manufacturing process; off-current; oxide thickness; random dopants; size 10.7 nm; square cross-section; subthreshold region; subthreshold slope; subthreshold swing; threshold voltage; triangular shape device; FinFETs; Geometry; IEEE Xplore; Logic gates; Monte Carlo methods; Semiconductor process modeling; Shape;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865877
