Title :
Enhanced evanescent transport and Goos-Hanchen localization in a disordered dielectric multilayer
Author :
Sheinfux, Hanan Herzig ; Segev, Mordechai
Author_Institution :
Phys. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We show that disorder in dielectric structures made of multiple layers of deep subwavelength thickness can induce extremely short-ranged localization. Additionally, the disorder can convert evanescent waves into bulk localized modes, enhancing transport dramatically (*10,000).
Keywords :
dielectric materials; optical multilayers; Goos-Hanchen localization; bulk localized modes; deep subwavelength thickness; dielectric structures; disordered dielectric multilayer; enhanced evanescent transport; evanescent waves; extremely short-ranged localization; multiple layers; Context; Dielectrics; Nonhomogeneous media; Optical surface waves; Permittivity; Reflection;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
