• DocumentCode
    1770063
  • Title

    Electroluminescence from a GaAs/AlGaAs heterostructure at high electric fields: Evidence for real- & k-space transfer

  • Author

    Weilu Gao ; Xuan Wang ; Rui Chen ; Strasser, G. ; Bird, Jonathan P. ; Kono, Junichiro

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.
  • Keywords
    Gunn effect; III-V semiconductors; aluminium compounds; electroluminescence; fluorescence; gallium arsenide; impact ionisation; semiconductor heterojunctions; GaAs-AlGaAs; Gunn effect; electroluminescence; impact-ionization-induced electroluminescence; k-space transfer; Anodes; Educational institutions; Electroluminescence; Gallium arsenide; Graphical models; HEMTs; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6988716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770063