Modelling and design of an electrically-pumped DFB laser based on an erbium-doped silicon-rich silicon oxide layer embedded in a slot waveguide

Author

Dell´Olio, F. ; Gadaleta, M. ; Tatoli, T. ; Ciminelli, C.

Author_Institution

Optoelectron. Lab., Politec. di Bari, Bari, Italy

fYear

2014

fDate

7-9 May 2014

Firstpage

1

Lastpage

3

Abstract

The development of a high-performance DFB laser compatible with the CMOS technology is essential for the future development of silicon photonics. In this paper the preliminary results on modelling and design of a distributed feedback silicon laser are reported. The gain medium, which is a layer of erbium doped silicon-rich silicon oxide, is embedded in a horizontal slot waveguide. The designed device includes a grating with 140 periods and a quarter-wave phase shift at the grating middle. The threshold gain coefficient of the laser is 0.4 cm^-1 and the emission wavelength is very close to 1.55 μm.

Keywords

distributed feedback lasers; elemental semiconductors; erbium; laser beams; optical pumping; optical waveguides; semiconductor lasers; silicon; silicon compounds; Si; SiO₂:Er; distributed feedback silicon laser; electrically-pumped DFB laser; emission wavelength; erbium-doped silicon-rich silicon oxide layer; gain medium; grating; horizontal slot waveguide; quarter-wave phase shift; threshold gain coefficient; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Optical waveguides; Silicon; Waveguide lasers; Distributed feedback laser; Nanosilicon photonics; Silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference, 2014 Third Mediterranean

Conference_Location

Trani

Type

conf

DOI

10.1109/MePhoCo.2014.6866499

Filename

6866499