DocumentCode
1770317
Title
Implantation of proximal NV clusters in diamond by lithographically defined silicon masks with 5 nm resolution
Author
Bayn, Igal ; Chen, Edward H. ; Luozhou Li ; Trusheim, Matthew E. ; Schroder, Tim ; Gaathon, Ophir ; Ming Lu ; Stein, Aaron ; Mingzhao Liu ; Kisslinger, Kim ; Englund, Dirk
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We present the fabrication of nitrogen-vacancy (NV) spin chains by implantation through a silicon mask on diamond. A minimum implantation aperture width of 5 nm is produced. Super-resolution measurements reveal NV lines 26 nm wide and minimal NV-pitch of 8 nm.
Keywords
V-centres; diamond; elemental semiconductors; nitrogen; semiconductor doping; vacancies (crystal); wide band gap semiconductors; C:N; diamond; lithographically defined silicon masks; minimal NV-pitch; minimum implantation aperture width; nitrogen-vacancy spin chain fabrication; proximal NV cluster implantation; superresolution measurements; Apertures; Diamonds; Fabrication; Image resolution; Imaging; Nitrogen; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6988855
Link To Document