DocumentCode :
177037
Title :
A 10ps 500MS/s two-channel Vernier TDC in 0.18um CMOS technology
Author :
Qianfeng Li ; Qingsheng Hu
Author_Institution :
Inst. of RF & OE-ICs, Southeast Univ., Nanjing, China
fYear :
2014
fDate :
29-30 Sept. 2014
Firstpage :
1268
Lastpage :
1271
Abstract :
This paper describes a fine resolution, good linearity, and high throughput time-to-digital converter (TDC), which has realized in 0.18um CMOS technology. Based on a two-channel Vernier delay line (VDL) structure and an asynchronous pipelined readout circuitry, the TDC can achieve a maximum throughput of 500MS/s, a time resolution of 10ps and a total conversion range of 640ps. The proposed architecture decreases the length of a single delay line, which improves the integral non-linearity (INL) of TDC. A test block circuit is embedded in the TDC to generate different time interval to facilitate the measurement. The TDC has been taped out with a total area including I/O pads of 1.25×0.675mm2.
Keywords :
CMOS integrated circuits; asynchronous circuits; delay lines; integrated circuit testing; readout electronics; time-digital conversion; CMOS technology; I-O pad; INL; TDC; VDL structure; asynchronous pipelined readout circuitry; integral nonlinearity; size 0.18 mum; test block circuit; time 10 ps; time 640 ps; time-to-digital converter; two-channel Vernier delay line structure; CMOS integrated circuits; Conferences; Delay lines; Delays; Layout; Simulation; Throughput; Vernier delay line; asynchronous; integral non-linearity; time-to-digital convert;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Research and Technology in Industry Applications (WARTIA), 2014 IEEE Workshop on
Conference_Location :
Ottawa, ON
Type :
conf
DOI :
10.1109/WARTIA.2014.6976513
Filename :
6976513
Link To Document :
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