Title :
Periodically oriented gallium nitride: Materials development
Author :
Hite, Jennifer K. ; Freitas, Jaime A. ; Goswami, Ramasis ; Mastro, Michael A. ; Vurgaftman, I. ; Meyer, J.R. ; Brown, Christopher G. ; Kub, Francis J. ; Bowman, Steven R. ; Eddy, Charles R.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; nonlinear optics; periodically oriented gallium nitride; Aluminum oxide; Films; Gallium nitride; Nonlinear optics; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
