• DocumentCode
    1770554
  • Title

    Periodically oriented gallium nitride: Materials development

  • Author

    Hite, Jennifer K. ; Freitas, Jaime A. ; Goswami, Ramasis ; Mastro, Michael A. ; Vurgaftman, I. ; Meyer, J.R. ; Brown, Christopher G. ; Kub, Francis J. ; Bowman, Steven R. ; Eddy, Charles R.

  • Author_Institution
    U.S. Naval Res. Lab., Washington, DC, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; nonlinear optics; periodically oriented gallium nitride; Aluminum oxide; Films; Gallium nitride; Nonlinear optics; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6988980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770554