• DocumentCode
    1770678
  • Title

    Electro-optic and converse piezoelectric coefficients of epitaxial thin films: GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO

  • Author

    Cuniot-Ponsard, M. ; Saraswati, I. ; Ko, S.M. ; Halbwax, M. ; Cho, Young H. ; Dogheche, E.

  • Author_Institution
    Lab. Charles Fabry (LCF), Univ. Paris-Sud, Palaiseau, France
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.
  • Keywords
    III-V semiconductors; MOCVD; Pockels effect; barium compounds; electroabsorption; ferroelectric thin films; gallium compounds; piezoelectric thin films; semiconductor epitaxial layers; semiconductor growth; sputter deposition; strontium compounds; wide band gap semiconductors; (SrBa)Nb2O6; GaN; MgO-Pt; Pockel electro-optic coefficient; Si; converse piezoelectric coefficient; electro-absorptive coefficient; epitaxial thin films; nonlinear optical materials; Electrooptic modulators; Electrooptical waveguides; Epitaxial growth; Gallium nitride; Semiconductor device measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770678