DocumentCode :
1770715
Title :
Femtosecond mode-locked VECSEL from widely cw-tunable gain chips
Author :
Head, C. Robin ; Hein, Alexander ; Shaw, E.A. ; Turnbull, Andrew P. ; Unger, P. ; Tropper, A.C.
Author_Institution :
Phys. & Astron., Univ. of Southampton, Southampton, UK
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We describe passively mode-locking of an InGaAs quantum well laser, comparing different dielectric coatings applied to the same gain wafer. A 7-fold variation in pulse duration down to 817 fs was observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; optical pulse generation; quantum well lasers; surface emitting lasers; InGaAs; VECSEL; dielectric coatings; femtosecond mode-locking; passive mode-locking; quantum well laser; time 817 ps; widely cw-tunable gain chips; Coatings; Laser mode locking; Optical pumping; Optical reflection; Surface emitting lasers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989064
Link To Document :
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