• DocumentCode
    1770717
  • Title

    GaAsBi laser diodes with low temperature dependence of lasing wavelength

  • Author

    Fuyuki, Takashi ; Yoshioka, Ryuichi ; Yoshida, Kenta ; Yoshimoto, Masahiko

  • Author_Institution
    Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    GaAs1-xBix laser diodes (LDs) with low temperature dependence of the oscillation wavelength (dλ/dT) are demonstrated. The value dλ/dT for a GaAs0.97Bi0.03 LD was as low as 0.16 nm/K. This reduction is attributed to a reduction in the temperature coefficient of the band gap.
  • Keywords
    gallium arsenide; semiconductor lasers; wide band gap semiconductors; GaAs0.97Bi0.03; band gap; laser diodes; lasing wavelength; low temperature dependence; oscillation wavelength; temperature coefficient reduction; Bismuth; Gallium arsenide; Lasers; Oscillators; Photonic band gap; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770717