Title :
Low efficiency droop green nano-pyramid {101̄1} InGaN/GaN multiple quantum well LED
Author :
Shih-Pang Chang ; Kang-lin Xiong ; Da-Wei Lin ; Yuh-Jen Cheng ; Jung Han ; Hao-Chung Kuo ; Chun-Yen Chang
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {101̅1} nano-pyramid facets. The device physics will be discussed in details.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN-GaN; device physics; green nanopyramid multiple quantum well; low efficiency droop green nano-pyramid; quantum well LED; semipolar nanopyramid facets; wavelength 520 nm; Current density; Educational institutions; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
