Title :
Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell
Author :
Yunjian Jiang ; Ishikawa, Yasuaki ; Yoshinaga, Seiya ; Honda, Tatsuki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan
Abstract :
In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.
Keywords :
diffusion barriers; elemental semiconductors; plasma CVD; refractive index; secondary ion mass spectra; silicon; silicon compounds; solar cells; thin film devices; thin films; SIMS measurement; SiO2 diffusion barrier layer; SiO2 film deposition; SiO2 film refractive index; SiO2 film thickness; SiO2-Si; back-contact crystalline silicon solar cell; boron diffusion process; phosphorous diffusion process; plasma chemical vapor deposition; polysilazane solution; sheet resistance measurement; solution-derived diffusion barrier layer development; spectroscopic ellipsometer measurement; Boron; Coatings; Electrical resistance measurement; Films; Photovoltaic cells; Refractive index; Silicon; back-contact silicon solar cell; diffusion barrier; polysilazane coating; process cost;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867047
