Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell

Author

Yunjian Jiang ; Ishikawa, Yasuaki ; Yoshinaga, Seiya ; Honda, Tatsuki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO₂ diffusion barrier layer in this study. The thickness and refractive index of SiO₂ film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO₂ layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO₂ deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.

Keywords

diffusion barriers; elemental semiconductors; plasma CVD; refractive index; secondary ion mass spectra; silicon; silicon compounds; solar cells; thin film devices; thin films; SIMS measurement; SiO₂ diffusion barrier layer; SiO₂ film deposition; SiO₂ film refractive index; SiO₂ film thickness; SiO₂-Si; back-contact crystalline silicon solar cell; boron diffusion process; phosphorous diffusion process; plasma chemical vapor deposition; polysilazane solution; sheet resistance measurement; solution-derived diffusion barrier layer development; spectroscopic ellipsometer measurement; Boron; Coatings; Electrical resistance measurement; Films; Photovoltaic cells; Refractive index; Silicon; back-contact silicon solar cell; diffusion barrier; polysilazane coating; process cost;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867047

Filename

6867047