Title :
Study of the conduction mechanism of the DNA memory FET
Author :
Nakamura, Shohei ; Matsuo, Naoto ; Yamana, Kazushige ; Heya, Akira ; Takada, Tadao ; Fukuyama, Masataka ; Yokoyama, Shin
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Abstract :
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.
Keywords :
DNA; electric fields; electrochemical electrodes; etching; field effect transistors; silicon compounds; silicon-on-insulator; DNA channel; DNA memory FET; SOI film; Si; SiO2-Si; carrier behavior; conduction mechanism; detrapped electrons; electric field; etching; gate structure; guanine-base; source-drain electrodes; voltage 0.3 V; Charge carrier processes; DNA; DVD; Electrodes; Field effect transistors; Logic gates; Silicon; DNA; memory FET; transistor;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867051
