Quantum transport simulation of ultra-small V-groove junctionless transistors

We have performed non-equilibrium Green´s function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.