Title :
Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator
Author :
Kodama, Shintaro ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
Interface properties have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al2O3, and the energy level of the interface state became shallow with increasing the annealing temperature.
Keywords :
III-V semiconductors; MIS devices; alumina; gallium compounds; interface states; semiconductor diodes; wide band gap semiconductors; zirconium compounds; GaN; MIS diodes; ZrO2-Al2O3; annealing temperature; deposition sequence; energy level; gate insulator; interface properties; interface state density; laminated films; Aluminum oxide; Annealing; Dielectric constant; Films; Insulators; Interface states; Logic gates; Al2O3; GaN; MIS diode; ZrO2;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867063
