Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy

This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and capacitance-voltage measurements. The conduction and valence band discontinuities were estimated from these results, and they were discussed compared to those obtained from the electron affinity rule.